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  4600 silicon drive | durham, nc 27703 | www.wolfspeed.com rev. 03, 2018-06-25 all published data at t case = 25c unless otherwise indicated esd: electrostatic discharge sensitive device?observe handling precautions! pxac182002fc thermally-enhanced high power rf ldmos fet 180 w, 28 v, 1805 ? 1880 mhz description the pxac182002fc is a 180-watt ldmos fet with an asymmetri- cal design intended for use in multi-standard cellular power ampli?er applications in the 1805 to 1880 mhz frequency band . features include dual-path design, input and output matching, high gain and thermally-enhanced package with earless ?anges. man ufactured with wolfspeed's advanced ldmos process, this devic e provides excellent thermal performance and superior reliability. pxac182002fc package h-37248-4 rf characteristics single-carrier wcdma specifications (tested in wolfspeed doherty test fixture) v dd = 28 v, i dq = 400 ma, v gspeak = 1.1 v, p out = 28.2 w avg, ? = 1880 mhz, 3gpp signal, channel bandwidth = 3.84 mhz, peak/average = 10 db @ 0.01% ccdf characteristic symbol min typ max unit gain g ps 15.5 16.5 ? db drain ef?ciency h d 48.5 51 ? % adjancent channel power ratio acpr ? ?30 ?26 dbc features ?? broadband internal input and output matching ?? asymmetrical doherty design - main: 70 w typ (p 1db ) - peak: 110 w typ (p 1db ) ?? typical pulsed cw performance, 1880 mhz, 28 v, combined outputs - output power at p 3db = 194 w - ef?ciency = 64% - gain = 14 db ?? capable of handling 10:1 vswr @28 v, 110 w (cw) output power ?? integrated esd protection ?? human body model class 1c (per ansi/esda/ jedec/js-001) ?? low thermal resistance ?? pb-free and rohs compliant -60 -40 -20 0 20 40 60 0 4 8 12 16 20 24 25 30 35 40 45 50 55 efficiency (%) peak/average ratio, gain (db) average output power (dbm) single-carrier wcdma drive-up v dd = 28 v, i dq = 400 ma, ? = 1880 mhz, 3gpp wcdma signal, par = 10 db, 3.84 mhz bw gain efficiency par @ 0.01% ccdf c182002fc_g1 downloaded from: http:///
4600 silicon drive | durham, nc 27703 | www.wolfspeed.com rev. 03, 2018-06-25 2 pxac182002fc dc characteristics (each side) characteristic conditions symbol min typ max unit drain-source breakdown voltage v gs = 0 v, i ds = 10 ma v( br)dss 65 ? ? v drain leakage current v ds = 28 v, v gs = 0 v i dss ? ? 0.1 a v ds = 63 v, v gs = 0 v i dss ? ? 1.0 a on-state resistance (main) v gs = 10 v, v ds = 0.1 v r ds(on) ? 0.18 ? w (peak) v gs = 10 v, v ds = 0.1 v r ds(on) ? 0.135 ? w operating gate voltage (main) v ds = 28 v, i dq = 400 ma v gs 2.55 2.65 2.75 v (peak) v ds = 28 v, i dq = 0 a v gs 0.9 1.2 1.3 v gate leakage current v gs = 10 v, v ds = 0 v i gss ? ? 0.1 a maximum ratings parameter symbol value unit drain-source voltage v dss 65 v gate-source voltage v gs ?6 to +10 v operating voltage v dd 0 to +32 v junction temperature t j 225 c storage temperature range t stg ?65 to +150 c thermal resistance (main, t case = 70c, 28 w cw) r q jc 1.088 c/w (peak, t case = 70c, 100 w cw) r q jc 0.587 c/w ordering information type and version order code package description shipping pxac182002fc v1 r0 PXAC182002FC-V1-r0 h-37248-4, earless ?ange tape & reel, 50 pcs pxac182002fc v1 r250 PXAC182002FC-V1-r250 h-37248-4, earless ?ange tape & reel, 250 pcs downloaded from: http:///
4600 silicon drive | durham, nc 27703 | www.wolfspeed.com rev. 03, 2018-06-25 3 pxac182002fc typical performance (data taken in a production test ?xture) 0 10 20 30 40 50 60 -70 -60 -50 -40 -30 -20 -10 27 32 37 42 47 52 efficiency(%) acp up & low (dbc) average output power (dbm) single-carrier wcdma drive-up v dd = 28 v, i dq = 400 ma, ? = 1880 mhz, 3gpp wcdma signal, par = 10 db, bw = 3.84 mhz efficiency acp up acp low c182002fc_g2 -50 -45 -40 -35 -30 -25 -20 27 32 37 42 47 52 acp up & low (dbc) average output power (dbm) single-carrier wcdma 3gpp drive-up v dd = 28 v, i dq = 400 ma, ? = 1805 -1880 mhz, 3gpp wcdma signal, par = 10 db, bw = 3.84 mhz 1880 acpl 1880 acpu 1842.5 acpl 1842.5 acpu 1805 acpl 1805 acpu c182002fc_g3 5 15 25 35 45 55 65 0 4 8 12 16 20 24 29 33 37 41 45 49 53 57 efficiency (%) gain (db) output power (dbm) cw performance v dd = 28 v, i dq = 400ma 1842.5 gain 1805 gain 1880 gain 1880 eff 1842.5 eff 1805 eff efficiency gain c182002fc_g4 5 20 35 50 65 5 10 15 20 25 27 35 43 51 59 efficiency (%) gain (db) output power (dbm) cw performance at various v dd i dq = 400 ma, ? = 1880 mhz 24v gain 28v gain 32v gain 24v eff 28v eff 32v eff gain efficiency c182002fc_g5 downloaded from: http:///
4600 silicon drive | durham, nc 27703 | www.wolfspeed.com rev. 03, 2018-06-25 4 pxac182002fc typical performance (cont.) load pull performance main side load pull performance ? pulsed cw signal: 160 s, 10% duty cycle, 28 v, i dq = 405 ma p 1db max output power max drain efficiency freq [mhz] zs [ w ] zl [ w ] gain [db] p out [dbm] p out [w] h d [%] zl [ w ] gain [db] p out [dbm] p out [w] h d [%] 1810 3.94 ? j10.15 2.92 ? j5.27 19.2 49.4 86 54.0 6.49 ? j2.19 21.9 47.2 52 66.6 1840 5.13 ? j10.93 2.93 ? j4.16 19.5 49.3 85 57.6 5.82 ? j2.44 21.7 47.5 56 66.3 1880 5.90 ? j12.44 2.73 ? j5.17 19.2 49.5 89 55.2 4.53 ? j2.29 21.5 47.7 59 67.9 peak side load pull performance ? pulsed cw signal: 160 s, 10% duty cycle, 28 v, i dq = 685 ma p 1db max output power max drain efficiency freq [mhz] zs [ w ] zl [ w ] gain [db] p out [dbm] p out [w] h d [%] zl [ w ] gain [db] p out [dbm] p out [w] h d [%] 1810 3.71 ? j9.13 4.64 ? j5.44 20.5 50.9 123 55.5 3.52 ? j2.84 22.7 49.7 94 66.2 1840 4.76 ? j8.65 4.66 ? j5.68 20.6 50.7 117 54.5 3.39 ? j3.01 23.2 49.2 84 64.1 1880 6.40 ? j9.13 4.63 ? j5.74 20.8 50.7 116 54.3 2.83 ? j3.50 23.1 49.2 83 64.3 -30 -25 -20 -15 -10 10 12 14 16 18 1700 1750 1800 1850 1900 1950 2000 input return loss (db) gain (db) frequency (mhz) cw performance small signal gain & input return loss v dd = 28 v, i dq = 400 ma irl gain c182002fc_g6 downloaded from: http:///
4600 silicon drive | durham, nc 27703 | www.wolfspeed.com rev. 03, 2018-06-25 5 pxac182002fc reference circuit , 1805 ? 1880 mhz reference circuit assembly diagram (not to scale) pxac182002fc_in_01 c102 rf_in rf_out v dd v gs v gspk c 1 8 2 0 0 2 f c _ c d _ 0 3 - 2 4 - 2 0 1 5 c101 c103 c105 c104 c106 c108 c107 c204 c206 c208 c207 c202 c201 c203 ro4350, .020 (61) c210 c211 ro4350, .020 (60) s1 r102 r101 r103 r104 r106 r105 pxac182002fc_out_01 c216 c213 c209 c218 c215 c214 v dd c217 c212 c219 c205 downloaded from: http:///
4600 silicon drive | durham, nc 27703 | www.wolfspeed.com rev. 03, 2018-06-25 6 pxac182002fc reference circuit (cont.) reference circuit assembly dut pxac182002fc v1 test fixture part no. lta/pxac182002fc v1 pcb rogers 4350, 0.508 mm [0.020?] thick, 2 oz. copper, r = 3.66, ? = 1805 ? 1880 mhz find gerber files for this test fixture on the wolfspeed web site at www.wolfspeed.com/rf components information component description manufacturer p/n input c101 capacitor, 1.2 pf atc atc600f1r2cw250t c102 capacitor, 0.5 pf atc atc600f0r5cw250t c103, c104, c105, c106 capacitor, 18 pf atc atc600f180jw250t c107, c108 capacitor, 10 f taiyo yuden umk325c7106mm-t r101 resistor, 50 w richardson c8a50z4a r102 resistor, 18 ohms panasonic electronic components erj-8geyj180v r103, r104 resistor, 301 w venkel cr0603-16w-3010ft r105, r106 resistor, 10 w panasonic electronic components erj-3geyj100v s1 hybrid coupler anaren x3c19p1-03s outputc201, c207, c215, c218, c219 capacitor, 18 pf atc atc600f180jw250t c202 capacitor, 0.8 pf atc atc600f0r8aw250t c203 capacitor, 5.1 pf atc atc600f5r1aw250t c204 capacitor, 1.6 pf atc atc600f1r6aw250t c205, c217 capacitor, 220 f cornell dubilier electronics sk221m050st c206, c208, c209, c211, c213, c214, c216 capacitor, 10 f taiyo yuden umk325c7106mm-t c210 capacitor, 0.5 pf atc atc600f0r5aw250t c212 capacitor, 1.6 pf atc atc600f1r6aw250t pinout diagram (top view) pin description d1 drain device 1 (main) d2 drain device 2 (peak) g1 gate device 1 (main) g2 gate device 2 (peak) s source (flange) lead connections for pxac182002fc h-37248-4_pd_10-10-2012 s d1 d2 g1 g2 main peak downloaded from: http:///
4600 silicon drive | durham, nc 27703 | www.wolfspeed.com rev. 03, 2018-06-25 7 pxac182002fc package outline speci?cations package h-37248-4 diagram notes?unless otherwise speci?ed: 1. interpret dimensions and tolerances per asme y14.5m-1994. 2. primary dimensions are mm. alternate dimensions are inches. 3. all tolerances 0.127 [.005] unless speci?ed otherwise. 4. pins: d1, d2 ? drains; g1, g2 ? gates; s ? source. 5. lead thickness: 0.10 + 0.076/?0.025 mm [0.004+0.003/?0.001 inch]. 6. gold plating thickness: 1.14 0.38 micron [45 15 microinch]. c l l c c l 2x 12.70 [.500] 19.810.20 [.7800.008] 4x 3.81 [.150] lid 9.40 [.370] flange 9.78 [.385] 2x 4.830.51 [.1900.020] 3.760.25 [.1480.010] sph 1.57 [.062] 4x r0.76 +0.13 -0.38 [ r.030 +0.005 -0.015 ] d1 d2 g1 g2 1.02 [.040] 20.57 [.810] s 2x 45 x 2.72 [45 x .107] (8.89 [.350]) (5.08 [.200]) 19.430.51 [.7650.020] h-37248-4_po_02_01-09-2013 0.0381 [.0015] -a- downloaded from: http:///
www.wolfspeed.com rev. 03, 2018-06-25 notes disclaimer speciications are subject to change without notice. cree, inc. believes the information contained wi thin this data sheet to be accurate and reliable. however, no responsibility is assumed by cree for any infringement of p atents or other rights of third parties which may result from its use. no license is granted by implication or otherwise un der any patent or pat - ent rights of cree. cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. etypicalf parameters are the average values expected by cree in large quantities and are provided for information purposes only. these values can and do vary in diferent applications and actual performa nce can vary over time. all operating parameters should be validated by customerds technical experts for each applicat ion. cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the cree product could r esult in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear fa cility. copyright ? 2018 cree, inc. all rights reserved. the information in this document is subject to change without notice. wolfspeed? and the wolfspeed logo are trademarks of cree, inc. for more information, please contact: 4600 silicon drive durham, north carolina, usa 27703 www.wolfspeed.com/rf sales contact rfsales@wolfspeed.com rf product marketing contact rfmarketingjwolfspeed.com 919.407.7816 8 pxac182002fc revision history revision date data sheet type page subjects (major changes since last revision) 01 2014-09-23 advance all data sheet re?ects advance speci?cation for product development 02 2015-03-24 production all all data sheet re?ects released product speci?cation revised all data and includes updated ?nal specs, typical performance graphs, loadpull, refer- ence circuit, package outline 02.1 2015-05-20 production 1 updated single-carrier wcdma test spec 02.2 2015-06-05 production 1 corrected i/o in description paragraph, removed f 1 from single-carrier wcdma test spec condi- tion 02.3 2016-06-17 production 1, 2 updated esd rating and ordering information to include r0 03 2018-06-25 production all converted to wolfspeed data sheet downloaded from: http:///


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